Copyright © 2011 Hsiu-Chuan Wei. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Electroless deposition for fabricating copper (Cu) interconnects of integrated circuits has drawn attention due to its low processing temperature, high deposition selectivity, and high coverage. In this paper, three-dimensional computer simulations of the qualitative growth properties of Cu particles and two-dimensional simulations of the trench-filling properties are conducted. The mathematical model employed in the study is a reaction-diffusion equation. An implicit finite difference discretization with a red-black Gauss-Seidel method as a solver is proposed for solving the reaction-diffusion equation. The simulated deposition properties agree with those observed in experimentation. Alternatives to improve the deposition properties are also discussed.